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Silicon-based diode temperature sensor

Diode temperature sensor can be used for static and dynamic temperature measurements in the 1.5 K to 450 K temperature range.

Three types of sensor packages are offered:
  • micro-package (1.2 mm in diameter and 1.0 mm thick)
  • micro-package with plate (2 mm square by 0.15 mm thick)
  • canister package (3 mm in diameter and 5 mm long)
  • Silicon-based diode sensors

    The temperature sensing element for thermometer is a silicon p+-n-n+ planar diode.  The size of the diode structure is 0.35 mm x 0.35 mm x 0.2 mm.  This sensitive element is placed in nonmagnetic miniature package.  The diode temperature microsensor overall size is 1.2 mm in diam. x 1.0 mm thick.

    The microsensors (1.2 mm in diameter and 1.0 mm thick) can be used when temperature measurement with high spatial resolution and small response time is required. They can also be incorporated in canister package (3 mm in diameter and 5 mm long).


     Characteristics of Si-based diode temperature sensors

    Voltage, U, and sensitivity, dU/dT, vs temperature, T, curves at different currents


    Overall and detailed views of the micro-thermometer design

    Micro-package (MP model):- 1.2 mm in diameter and 1.0 mm thick



    The temperature sensing element is contained within an alumina tube which has copper end caps. The element is bonded to the one of end cap and electrical contact made to both caps through 30-50 µm gold wires. Finally, copper wires are soldered to the end caps to facilitate four-terminal measurements.


    The micro-packaged thermometer with plate, MPP model



    The micro-packaged thermometer is soldered to the plate (2 mm square by 0.15 mm thick). Electrical contacts made of copper wires, which are soldered to the plate to provide measurements.


    L I T E R A T U R E

       
    1. Download the article Є.Ф.Венгер, А.С.Зенкін, Н.Л.Козелло, Б.П.Колодич, Н.М.Криницька, О.С.Кулик, В.Ф.Мітін, І.Ю.Неміш, В.В.Холевчук. Мініатюрні кремнієві діодні та германієві резистивні термометри для вимірювання низьких температур. Фізика і хімія твердого тіла, 2, 499-505 (2010).

    2.  
    3. Download the article N.S. Boltovets, V.V. Kholevchuk, R.V. Konakova, V.F. Mitin,  E.F. Venger,  Ge-film resistance and Si-based diode temperature microsensors for cryogenic applications, Sensors and Actuators A, 92, 191-196 (2001).

    4.  
    5. Download the article  N.S. Boltovets, V.V. Basanets, V.N. Ivanov, V.A. Krivutsa, A.E. Belyaev, R.V. Konakova, V.G. Lyapin, V.V. Milenin, E.A. Soloviev, E.F. Venger, D.I. Voitsikhovskyi, V.V. Kholevchuk, V.F. Mitin,  Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals, Semiconductor Physics, Quantum Electronics & Optoelectronics, 3, 359-370 (2000).



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