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Sensors:  Є.Ф.Венгер, А.С.Зенкін, Н.Л.Козелло, Б.П.Колодич, Н.М.Криницька, О.С.Кулик, В.Ф.Мітін, І.Ю.Неміш, В.В.Холевчук. Мініатюрні кремнієві діодні та германієві резистивні термометри для вимірювання низьких температур. Фізика і хімія твердого тіла, 2, 499 (2010).
V.F.Mitin, N.S.Boltovets, V.V.Kholevchuk, V.V.Basanets, E.V.Mitin, P.C.McDonald, F.Pavese. Dual function sensors for concurrent measurements of temperature and magnetic fields in cryogenic applications. Cryogenics, Vol. 48, pp. 413-416 (2008). V.F.Mitin, P.C.McDonald, F.Pavese, N.S.Boltovets, V.V.Kholevchuk, I.Yu.Nemish, V.V.Basanets, V.K.Dugaev, P.V.Sorokin, R.V.Konakova, E.F.Venger, E.V.Mitin. Ge-on-GaAs film resistance thermometers for cryogenic applications. Cryogenics, Vol. 47, pp. 474-482 (2007). N.S.Boltovets, V.V.Kholevchuk, R.V.Konakova, Ya.Ya.Kudryk, P.M.Lytvyn, V.V.Milenin, V.F.Mitin, E.V.Mitin. A silicon carbide thermistor. Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol. 9, N.4, pp. 67-70 (2006).
N.S.Boltovets, R.V.Konakova, Ya.Ya.Kudryk, V.V.Milenin, V.F.Mitin, E.V.Mitin, O.S.Lytvyn, L.M.Kapitanchuk. Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures. Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol. 9, N.2, pp. 58-60 (2006).
V.F.Mitin, N.S.Boltovets, V.V.Basanets, V.V.Kholevchuk, I.Yu.Nemish, E.V.Mitin, P.C.McDonald, F.Pavese, New thermometers and multisensors for cryogenic temperature and magnetic field measurements. Advances in Cryogenic Engineering, Vol.51, pp.1243-1250 (2006). AIP Conference Proceedings 823: Transactions of the Cryogenic Engineering Conference (CEC).
V.F.Mitin, V.V.Kholevchuk, N.S.Boltovets, I.Yu.Nemish, E.V.Mitin, E.F.Venger, F.Pavese, P.C.McDonald and G.G.Ihas, Review of Ge-GaAs Thermometers and Multisensors for Measurement of Temperature and Magnetic Field in Cryogenic Applications. Proc. of 24th International Conference on Low Temperature Physics, Orlando, Florida, USA, August 10-17, 2005, AIP Conference Proceedings 850, pp.1595-1596 (2006).
Yihui Zhou, Vadim F. Mitin, Greg Labbe, Shu-chen Liu, Ridvan Adjimambetov, and Gary G. Ihas, Sub-millimeter Size Sensors for Measurements in Cryogenic Turbulence. Proc. of 24th International Conference on Low Temperature Physics, Orlando, Florida, USA, August 10-17, 2005, AIP Conference Proceedings 850, pp.1631-1632 (2006).
V.F.Mitin, P.C.McDonald, F.Pavese, N.S.Boltovets, V.V.Kholevchuk, I.Yu.Nemish, V.V.Basanets, V.K.Dugaev, P.V.Sorokin, E.F.Venger, E.V.Mitin. New temperature and magnetic field sensors for cryogenic applications developed under a European Project. Proc. of the Twentieth International Cryogenic Engineering Conference (ICEC 20): Beijing, China, 11-14 May 2004, pp.971-974. (Zhang, Liang (EDT) /Lin, Liangzhen (EDT) /Chen, Guobang (EDT) /Publisher: Elsevier Science Ltd Published 2006/03, ISBN:0080445594 (Hard cover book).
V.F.Mitin, N.S.Boltovets, V.V.Basanets, V.V.Kholevchuk, I.Yu.Nemish, F.Pavese, P.C.McDonald. Ge/GaAs thermometers and multisensor for temperature and magnetic field measurements. Proc. of 9th International Symposium on Temperature and Thermal Measurements in Industry and Science, “TEMPMEKO 2004”, Cavtat-Dubrovnik, Croatia, June 21-25, 2004, pp.643-648. N.S.Boltovets, V.K.Dugaev, V.V.Kholevchuk, P.C.McDonald, V.F.Mitin, I.Yu.Nemish, F.Pavese, P.V.Sorokin, E.A.Soloviev and E.F.Venger, New generation of resistance thermometers based on Ge films on GaAs substrates, Temperature: Its Measurement and Control in Science and Industry, Vol.7, edited by Dean C. Ripple, AIP Conference Proceedings 684, pp.399-404 (2003). Eighth Symposium on Temperature: Its Measurement and Control in Science and Industry, Chicago, USA, October 21-24, 2002.
V.F.Mitin, N.S.Boltovets, V.V.Kholevchuk, I.Yu.Nemish. Ge-film thermometers and multifunctional sensors for low temperature and magnetic field measurements. Proc. of 2nd International Seminar on Low Temperature Thermometry, Wroclaw, Poland, October 6–7, 2003. Edited by A. Szmyrka-Grzebyk and A. Kowal (INTiBS, Wroclaw, 2003), pp.144 - 150 (invited publication). G.G.Ihas, V.F.Mitin, and N.S.Sullivan. Cryogenic mass gauging in a free-falling storage tank, Journal of Low Temperature Physics, Vol. 134 (1-2) pp. 437-442 (2003). V.K.Dugaev, G.G.Ihas, C.McKenney, V.V.Kholevchuk, V.F.Mitin, I.Yu.Nemish, E.A.Soloviev, M.Vieira. Characterization and modelling of Ge film thermometers for low temperature measurements. Proc. of IEEE Sensors 2002, Vol.2 (Piscataway, NJ, 2002), pp.1275 – 1280. First IEEE International Conference on Sensors, Orlando, USA, June 12-14, 2002.
N.S.Boltovets, V.V.Kholevchuk, R.V.Konakova, V.F.Mitin and E.F.Venger, Ge-film resistance and Si-based diode temperature microsensors for cryogenic applications, Sensors and Actuators A Vol. 92, pp. 191-196 (2001).
V.F.Mitin, N.S.Boltovets, V.V.Kholevchuk, R.V.Konakova. Germanium-Film Resistance Microthermometers Intended for Operation within the Temperature Range of 0.03-300 K. Inzhenerno-Fizicheskii Zhurnal [Journal of Engineering Physics and Thermophysics] Vol. 73, No. 1, pp. 202-205 (2000). A.E.Belyaev, R.V.Konakova, V.V.Milenin, E.A.Soloviev, D.I.Voitsikhovskyi, N.S.Boltovets, V.V.Basanets, V.A.Krivutsa, V.F.Mitin. Development and investigation of oscillator diodes for the millimeter wavelength range, Romanian Journal of Information Science and Technology, Vol. 3, No. 1, pp. 5-15 (2000).
N.S.Boltovets, V.V.Basanets, V.N.Ivanov, V.A.Krivutsa, A.E.Belyaev, R.V.Konakova, V.G.Lyapin, V.V.Milenin, E.A.Soloviev, E.F.Venger, D.I.Voitsikhovski, V.V.Kholevchuk, V.F.Mitin. Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals. Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol. 3, No. 3, pp. 359-370 (2000).
V.F.Mitin. Resistance thermometers based on the germanium films. Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol. 2, No. 1, pp.115-123 (1999).
K.A.Dauletov, G.N.Kashin, R.V.Konakova, V.V.Milenin, V.F.Mitin. Heat-resistance Shottku diode based on Ge/GaAs heterostructure. Journal of Surface Investigation. X-Ray, Synchrotron and Neutron Techniques No.3, pp.60-62 (1999) [in Russian]. V.F.Mitin, Miniature resistance thermometers based on Ge films on GaAs, Advances in Cryogenic Engineering, Vol.43, pp.749-756 (1998).
V.F.Mitin. Ge/GaAs heterostructure: preparation, properties, and application to sensors. Molecular Physics Reports, Vol.21, pp.71-78 (1998).
V.F.Mitin, E.F.Venger, N.S.Boltovets, M.Oszwaldowski and T.Berus. Low-temperatue Ge film resistance thermometers. Sensors and Actuators A, Vol. 68, No. 1-3, pp. 303-306 (1998). V.F.Mitin. Miniature temperature sensors based on Ge films. J. Phys. IV France, Vol.8, pp.193-195 (1998). V.F.Mitin, Yu.A.Tkhorik and E.F.Venger. All-purpose technology of physical sensors on the base of Ge/GaAs heterostructures. Microelectronics Journal, Vol.28, pp.617-625 (1997).
V.Mitin. Microsensors of temperature, magnetic field, and strain. Cryogenics, Vol. 34, (ICEC Supplement) pp. 437-440 (1994).
В.Ф.Митин, Ю.А.Тхорик. Микросенсоры физических величин на основе пленок германия на арсениде галлия. Петербургский журнал электроники, No. 3, с. 48-51 (1993). В.Ф.Митин, С.В.Корытцев, Ю.М.Шварц, Ю.А.Тхорик. Измерительные датчики на основе гетероэпитаксиальных пленок германия на арсениде галлия. Приборы и системы управления, No. 7, с. 29-30 (1989) V.F.Mitin, Yu.A.Tkhorik, Yu.M.Shvarts. Thermometrical characteristics of films of heavily doped and higly compensated germanium. Ukrainian Journal of Physics, Vol. 31, No. 1, pp. 105-107 (1986). Properties of sensor materials: V.F. Mitin. Preparation and properties of heavily doped and strongly compensated Ge films on GaAs. Journal of Applied Physics, 107, 033720, (2010). Є.Ф.Венгер, Р.В.Конакова, Л.О.Матвеєва, І.М.Матіюк, В.Ф.Мітін, Є.В.Мітін, В.А.Одарич, О.В.Руденко, М.П.Семенько, М.В.Хименко, В.В.Холевчук. Плівки германію на арсеніді галію: структурні, електронні та оптичні властивості. Фізика і хімія твердого тіла, 2, 315 (2009).
V.F.Mitin. Heavily doped and fully compensated Ge single-crystalline films on GaAs. Applied Physics Letters, 92, 202111 (2008). V.F.Mitin, V.K.Dugaev, G.G.Ihas. Large negative magnetoresistance in Ge films at ultralow temperatures and low magnetic fields. Applied Physics Letters, Vol. 91, Issue 20, 202107 (2007). V.F.Mitin, V.K.Dugaev, G.G.Ihas, Condution and magnetoresistance mechanisms in Ge-films used foe low temperature resistance thermometers. Proc. of 24th International Conference on Low Temperature Physics, Orlando, Florida, USA, August 10-17, 2005, AIP Conference Proceedings 850, pp.1472-1473 (2006). V.K.Dugaev, J.Berakdar, J.Barnas, W.Dobrowolski, V.F.Mitin, M.Vieira. Magnetoresistance due to domain walls in semiconducting magnetic nanostructures. Materials Science and Engineering C, 25, pp. 705-709 (2005). V.K.Dugaev, J.Barnaś, J.Berakdar, V.I.Ivanov, W.Dobrowolski, V.F.Mitin. Magnetoresistance of a semiconducting magnetic wire with domain wall. Physical Review B, Vol. 71, No. 2, 024430 (2005). V.K.Dugaev, V.F.Mitin. Modeling of characteristics for low-temperature Ge-film sensors. Proc. of 2nd International Seminar on Low Temperature Thermometry, Wroclaw, Poland, October 6–7, 2003. Edited by A. Szmyrka-Grzebyk and A. Kowal (INTiBS, Wroclaw, 2003), pp.151 - 157. V.F.Mitin, V.V.Kholevchuk, V.K.Dugaev, M.Vieira. Low temperature properties of compensated Ge films used for cryogenic thermometers. In: Defect and Impurity Engineered Semiconductors and Devices III. Editors: S. Ashok, J. Chevallier, N.M. Johnson, B.L. Sopori, H. Okushi. MRS Proceedings, Vol.719 (Materials Research Society, Warrendale, 2002), pp.445–450. 2002 Materials Research Society (MRS) Spring Meeting, San Francisco, USA, April 1 – 5, 2002. V.F.Mitin, V.V.Kholevchuk, R.V.Konakova, E.F.Venger, V.A.Odarich, O.V.Rudenko, M.P.Semen’ko, M.V.Khimenko. Surface structure and electrical properties of Ge films on semi-insulating GaAs substrates. Proc. of 23th International Conference on Microelectronics (MIEL’02) Nis, Yugoslavia, May 12-15, 2002, Vol.1, pp.401 - 404. V.A.Odarich, O.V.Rudenko, M.P.Semen’ko, R.V.Konakova, V.F.Mitin, V.V.Kholevchuk, Ellipsometric studies of amorphous germanium films on single-crystalline gallium arsenide substrates, Functional Materials, Vol. 8 No. 2 pp. 355-360 (2001). V.Mitin, J.McFarland, G.Ihas, V.К.Dugaev. Ge film thermometers at ultralow temperatures in high magnetic fields, Physica B, Vol. 284-288, pp. 1996-1997 (2000). V.F.Mitin, E.V.Mozdor, and Yu.A.Tkhorik. Two-dimensional percolation in the heteroepitaxial films of germanium. Fiz. Nizk. Temp. 17, pp.1124-1126 (1991) [Sov. J. Low Temp. Phys. 17(9), pp.588-590 (September 1991)]. N.P.Garbar, L.A.Matveeva, V.F.Mitin, Yu.A.Tkhorik, R.Harman, Yu.M.Shvarts, and Z.Stroubek. Heavily doped and strongly compensated heteroepitaxial germanium films. Fiz. Tekh. Poluprovodn., vol. 21, no. 3, pp. 393-399, March 1987 [Sov. Phys. Semicond. Vol. 21, no. 3, pp.245-249, March 1987]. Effect of active actions on the properties of semiconductor materials and structures: E.Atanassova, R.V.Konakova, V.F.Mitin, D.Spassov, Trap parameters and conduction mechanism in HfO2–Ta2O5 mixed stacks in response to microwave irradiation. Microelectronic Engineering (2010). E.Atanassova, P.Lytvyn, R.V.Konakova, V.F.Mitin and D.Spassov. Conductive-atomic force microscopy characterization of Ta2O5/SiO2 stacks and the effect of microwave irradiation. Journal of Physics D: Applied Physics, 42, 145301 (2009).
E.Yu.Kolyadina, R.V.Konakova, L.A.Matveeva, V.F.Mitin, V.V.Shynkarenko, E.Atanassova. Microwave induced structural-impurity ordering of transition region in Ta2O5 stacks on Si. Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol. 11, N.4, pp. 311-318 (2008).
Effect of active actions on the properties of semiconductor materials and structures/ E.D.Atanassova, A.E.Belyaev, R.V.Konakova, P.M.Lytvyn, V.V.Milenin, V.F.Mitin, V.V.Shynkarenko - Kharkiv: NTC "Inst. for Single Crystals", 2007.- pages - 216 (book), full text of the book.
E.Atanassova, V.F.Mitin, R.V.Konakova, D.Spassov and V.V.Schinkarenko. Microwave irradiation impact on Ta2O5 stack capacitors with different gates. Semiconductor Science and Technology Vol. 23, No. 3, 035004 (2008). E.Atanassova, R.V.Konakova, V.F.Mitin, D.Spasov, O.S.Lytvyn, V.V.Schinkarenko. Microwave irradiation effect on Ti-doped Ta2O5 stacked capacitors. Recent Patents on Electrical Engineering, Vol. 1, pp. 47-58 (2008). E.Atanassova, R.V.Konakova, V.F.Mitin, J.Koprinarova, O.S.Lytvyn, O.B.Okhrimenko, V.V.Schinkarenko, D.Virovska, Effect of microwave radiation on the properties of Ta2O5-Si microstructures, Microelectronics Reliability, Vol. 45, pp. 123-135 (2005). E.Atanassova, A.Paskaleva, R.Konakova, D.Spassov, V.F.Mitin, Influence of radiation on thin Ta2O5-Si structures, Microelectronics Journal 32 pp. 553-562 (2001). А.В.Бобыль, К.А.Исмайлов, Р.В.Конакова, Л.Н.Кравченко, В.В.Миленин, В.Ф.Митин, И.В.Прокопенко. Влияние гадиации на явления переноса в НЕМТ-структурах AlGaAs/GaAs. Петербургский журнал электроники, No. 4, с. 25-29 (1996). |
