Education and Degrees:
1. M.S. degree in electronic engineering from the National Technical University of Ukraine "Kiev Politechnical Institute" (Kiev) in 1982.
2. Candidate of Physical and Mathematical Sciences degree with a speciality in physics of semiconductors and dielectrics (equivalent to Ph.D.) from the Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine (Kiev) in 1990.
Dissertation:
"Development, investigation and application of heavily doped and strongly compensated heteroepitaxial germanium films on gallium arsenide", 1990.
Research interests are in the following areas:
semiconductor films technology; structural, electrical, magnetic and optical properties of semiconductor films and heterostructures; micro and nanotechnologies; microsystems; temperature, magnetic field, strain, pressure and optical radiation sensors; low-temperature physics; cryogenic engineering; cryogenic thermometry and metrology.
Research experience and publications:
scientific publications include one book, 40 articles in refereed international scientific journals, more than 40 presentations at international conferences and publications in conference proceedings, and 9 certificates on inventions.
List of main publications:
Book:
Effect of active actions on the properties of semiconductor materials and structures/ E.D.Atanassova, A.E.Belyaev, R.V.Konakova, P.M.Lytvyn, V.V.Milenin, V.F.Mitin, V.V.Shynkarenko - Kharkiv: NTC "Inst. for Single Crystals", 2007.- pages - 216 (book), full text of the book.
Articles in journals:
V.F.Mitin, V.V.Kholevchuk, B.P.Kolodych. Ge-on-GaAs film resistance thermometers: low-temperature conduction and magnetoresistance. Submitted to Cryogenics, (2010).
Є.Ф.Венгер, А.С.Зенкін, Н.Л.Козелло, Б.П.Колодич, Н.М.Криницька, О.С.Кулик, В.Ф.Мітін, І.Ю.Неміш, В.В.Холевчук. Мініатюрні кремнієві діодні та германієві резистивні термометри для вимірювання низьких температур. Фізика і хімія твердого тіла, 2, 499 (2010).
E.Atanassova, R.V.Konakova, V.F.Mitin, D.Spassov, Trap parameters and conduction mechanism in HfO2–Ta2O5 mixed stacks in response to microwave irradiation. Microelectronic Engineering, 87, 2294-2300 (2010).
V.F. Mitin. Preparation and properties of heavily doped and strongly compensated Ge films on GaAs. Journal of Applied Physics, 107, 033720 (2010).
Є.Ф.Венгер, Р.В.Конакова, Л.О.Матвеєва, І.М.Матіюк, В.Ф.Мітін, Є.В.Мітін, В.А.Одарич, О.В.Руденко, М.П.Семенько, М.В.Хименко, В.В.Холевчук. Плівки германію на арсеніді галію: структурні, електронні та оптичні властивості. Фізика і хімія твердого тіла, 2, 315 (2009).
E.Atanassova, P.Lytvyn, R.V.Konakova, V.F.Mitin and D.Spassov. Conductive-atomic force microscopy characterization of Ta2O5/SiO2 stacks and the effect of microwave irradiation. Journal of Physics D: Applied Physics, 42, 145301 (2009).
V.F.Mitin. Heavily doped and fully compensated Ge single-crystalline films on GaAs. Applied Physics Letters, 92, 202111 (2008).
V.F.Mitin, N.S.Boltovets, V.V.Kholevchuk, V.V.Basanets, E.V.Mitin, P.C.McDonald, F.Pavese. Dual function sensors for concurrent measurements of temperature and magnetic fields in cryogenic applications. Cryogenics, Vol. 48, pp. 413-416 (2008).
E.Yu.Kolyadina, R.V.Konakova, L.A.Matveeva, V.F.Mitin, V.V.Shynkarenko, E.Atanassova. Microwave induced structural-impurity ordering of transition region in Ta2O5 stacks on Si. Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol. 11, N.4, pp. 311-318 (2008).
E.Atanassova, V.F.Mitin, R.V.Konakova, D.Spassov and V.V.Schinkarenko. Microwave irradiation impact on Ta2O5 stack capacitors with different gates. Semiconductor Science and Technology Vol. 23, No. 3, 035004 (2008).
E.Atanassova, R.V.Konakova, V.F.Mitin, D.Spasov, O.S.Lytvyn, V.V.Schinkarenko. Microwave irradiation effect on Ti-doped Ta2O5 stacked capacitors. Recent Patents on Electrical Engineering, Vol. 1, pp. 47-58 (2008).
V.F.Mitin, V.K.Dugaev, G.G.Ihas. Large negative magnetoresistance in Ge films at ultralow temperatures and low magnetic fields. Applied Physics Letters, Vol. 91, Issue 20, 202107 (2007).
V.F.Mitin, P.C.McDonald, F.Pavese, N.S.Boltovets, V.V.Kholevchuk, I.Yu.Nemish, V.V.Basanets, V.K.Dugaev, P.V.Sorokin, R.V.Konakova, E.F.Venger, E.V.Mitin. Ge-on-GaAs film resistance thermometers for cryogenic applications. Cryogenics, Vol. 47, pp. 474-482 (2007).
N.S.Boltovets, V.V.Kholevchuk, R.V.Konakova, Ya.Ya.Kudryk, P.M.Lytvyn, V.V.Milenin, V.F.Mitin, E.V.Mitin. A silicon carbide thermistor. Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol. 9, N.4, pp. 67-70 (2006).
N.S.Boltovets, R.V.Konakova, Ya.Ya.Kudryk, V.V.Milenin, V.F.Mitin, E.V.Mitin, O.S.Lytvyn, L.M.Kapitanchuk. Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures. Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol. 9, N.2, pp. 58-60 (2006).
V.K.Dugaev, J.Berakdar, J.Barnas, W.Dobrowolski, V.F.Mitin, M.Vieira. Magnetoresistance due to domain walls in semiconducting magnetic nanostructures. Materials Science and Engineering C, 25, pp. 705-709 (2005).
V.K.Dugaev, J.Barnaś, J.Berakdar, V.I.Ivanov, W.Dobrowolski, V.F.Mitin. Magnetoresistance of a semiconducting magnetic wire with domain wall. Physical Review B, Vol. 71, No. 2, 024430 (2005).
E.Atanassova, R.V.Konakova, V.F.Mitin, J.Koprinarova, O.S.Lytvyn, O.B.Okhrimenko, V.V.Schinkarenko, D.Virovska, Effect of microwave radiation on the properties of Ta2O5-Si microstructures, Microelectronics Reliability, Vol. 45, pp. 123-135 (2005).
G.G.Ihas, V.F.Mitin, and N.S.Sullivan. Cryogenic mass gauging in a free-falling storage tank, Journal of Low Temperature Physics, Vol. 134 (1-2) pp. 437-442 (2003).
N.S.Boltovets, V.V.Kholevchuk, R.V.Konakova, V.F.Mitin and E.F.Venger, Ge-film resistance and Si-based diode temperature microsensors for cryogenic applications, Sensors and Actuators A Vol. 92, pp. 191-196 (2001).
E.Atanassova, A.Paskaleva, R.Konakova, D.Spassov, V.F.Mitin, Influence of radiation on thin Ta2O5-Si structures, Microelectronics Journal 32 pp. 553-562 (2001).
V.A.Odarich, O.V.Rudenko, M.P.Semen’ko, R.V.Konakova, V.F.Mitin, V.V.Kholevchuk, Ellipsometric studies of amorphous germanium films on single-crystalline gallium arsenide substrates, Functional Materials, Vol. 8 No. 2 pp. 355-360 (2001).
V.F.Mitin, N.S.Boltovets, V.V.Kholevchuk, R.V.Konakova. Germanium-Film Resistance Microthermometers Intended for Operation within the Temperature Range of 0.03-300 K. Inzhenerno-Fizicheskii Zhurnal [Journal of Engineering Physics and Thermophysics] Vol. 73, No. 1, pp. 202-205 (2000).
V.Mitin, J.McFarland, G.Ihas, V.К.Dugaev. Ge film thermometers at ultralow temperatures in high magnetic fields, Physica B, Vol. 284-288, pp. 1996-1997 (2000).
A.E.Belyaev, R.V.Konakova, V.V.Milenin, E.A.Soloviev, D.I.Voitsikhovskyi, N.S.Boltovets, V.V.Basanets, V.A.Krivutsa, V.F.Mitin. Development and investigation of oscillator diodes for the millimeter wavelength range, Romanian Journal of Information Science and Technology, Vol. 3, No. 1, pp. 5-15 (2000).
N.S.Boltovets, V.V.Basanets, V.N.Ivanov, V.A.Krivutsa, A.E.Belyaev, R.V.Konakova, V.G.Lyapin, V.V.Milenin, E.A.Soloviev, E.F.Venger, D.I.Voitsikhovski, V.V.Kholevchuk, V.F.Mitin. Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals. Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol. 3, No. 3, pp. 359-370 (2000).
V.F.Mitin. Resistance thermometers based on the germanium films. Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol. 2, No. 1, pp.115-123 (1999).
K.A.Dauletov, G.N.Kashin, R.V.Konakova, V.V.Milenin, V.F.Mitin. Heat-resistance Shottku diode based on Ge/GaAs heterostructure. Journal of Surface Investigation. X-Ray, Synchrotron and Neutron Techniques No.3, pp.60-62 (1999) [in Russian].
V.F.Mitin. Ge/GaAs heterostructure: preparation, properties, and application to sensors. Molecular Physics Reports, Vol.21, pp.71-78 (1998).
V.F.Mitin, E.F.Venger, N.S.Boltovets, M.Oszwaldowski and T.Berus. Low-temperatue Ge film resistance thermometers. Sensors and Actuators A, Vol. 68, No. 1-3, pp. 303-306 (1998).
V.F.Mitin. Miniature temperature sensors based on Ge films. J. Phys. IV France, Vol.8, pp.193-195 (1998).
V.F.Mitin, Yu.A.Tkhorik and E.F.Venger. All-purpose technology of physical sensors on the base of Ge/GaAs heterostructures. Microelectronics Journal, Vol.28, pp.617-625 (1997).
V.F.Mitin, Yu.A.Tkhorik and E.F.Venger. Ge films on GaAs: low-temperature electrical properties and application to cryogenic resistance temperature sensors. Czechoslovak Journal of Physics, Vol.46, pp.2855-2856 (1996).
А.В.Бобыль, К.А.Исмайлов, Р.В.Конакова, Л.Н.Кравченко, В.В.Миленин, В.Ф.Митин, И.В.Прокопенко. Влияние гадиации на явления переноса в НЕМТ-структурах AlGaAs/GaAs. Петербургский журнал электроники, No. 4, с. 25-29 (1996).
V.Mitin. Microsensors of temperature, magnetic field, and strain. Cryogenics, Vol. 34, (ICEC Supplement) pp. 437-440 (1994).
В.Ф.Митин, Ю.А.Тхорик. Микросенсоры физических величин на основе пленок германия на арсениде галлия. Петербургский журнал электроники, No. 3, с. 48-51 (1993).
V.F.Mitin, E.V.Mozdor, and Yu.A.Tkhorik. Two-dimensional percolation in the heteroepitaxial films of germanium. Fiz. Nizk. Temp. 17, pp.1124-1126 (1991) [Sov. J. Low Temp. Phys. 17(9), pp.588-590 (September 1991)].
В.Ф.Митин, С.В.Корытцев, Ю.М.Шварц, Ю.А.Тхорик. Измерительные датчики на основе гетероэпитаксиальных пленок германия на арсениде галлия. Приборы и системы управления, No. 7, с. 29-30 (1989)
N.P.Garbar, L.A.Matveeva, V.F.Mitin, Yu.A.Tkhorik, R.Harman, Yu.M.Shvarts, and Z.Stroubek. Heavily doped and strongly compensated heteroepitaxial germanium films. Fiz. Tekh. Poluprovodn., vol. 21, no. 3, pp. 393-399, March 1987 [Sov. Phys. Semicond. Vol. 21, no. 3, pp.245-249, March 1987].
V.F.Mitin, Yu.A.Tkhorik, Yu.M.Shvarts. Thermometrical characteristics of films of heavily doped and higly compensated germanium. Ukrainian Journal of Physics, Vol. 31, No. 1, pp. 105-107 (1986).
Publications in conference proceedings:
V.F.Mitin, N.S.Boltovets, V.V.Basanets, V.V.Kholevchuk, I.Yu.Nemish, E.V.Mitin, P.C.McDonald, F.Pavese, New thermometers and multisensors for cryogenic temperature and magnetic field measurements. Advances in Cryogenic Engineering, Vol.51, pp.1243-1250 (2006). AIP Conference Proceedings 823: Transactions of the Cryogenic Engineering Conference (CEC).
V.F.Mitin, N.S.Boltovets, V.V.Basanets, V.V.Kholevchuk, I.Yu.Nemish, E.V.Mitin, F.Pavese, P.C.McDonald, New accurate multisensor for cryogenic temperature and magnetic field measurements. Proc. of 21st International Cryogenic Engineering Conference (ICEC 20), Prague, Czech Republic, July 17-21, 2006.
V.F.Mitin, V.V.Kholevchuk, N.S.Boltovets, I.Yu.Nemish, E.V.Mitin, E.F.Venger, F.Pavese, P.C.McDonald and G.G.Ihas, Review of Ge-GaAs Thermometers and Multisensors for Measurement of Temperature and Magnetic Field in Cryogenic Applications. Proc. of 24th International Conference on Low Temperature Physics, Orlando, Florida, USA, August 10-17, 2005, AIP Conference Proceedings 850, pp.1595-1596 (2006).
V.F.Mitin, V.K.Dugaev, G.G.Ihas, Condution and magnetoresistance mechanisms in Ge-films used foe low temperature resistance thermometers. Proc. of 24th International Conference on Low Temperature Physics, Orlando, Florida, USA, August 10-17, 2005, AIP Conference Proceedings 850, pp.1472-1473 (2006).
Yihui Zhou, Vadim F. Mitin, Greg Labbe, Shu-chen Liu, Ridvan Adjimambetov, and Gary G. Ihas, Sub-millimeter Size Sensors for Measurements in Cryogenic Turbulence. Proc. of 24th International Conference on Low Temperature Physics, Orlando, Florida, USA, August 10-17, 2005, AIP Conference Proceedings 850, pp.1631-1632 (2006).
V.F.Mitin, P.C.McDonald, F.Pavese, N.S.Boltovets, V.V.Kholevchuk, I.Yu.Nemish, V.V.Basanets, V.K.Dugaev, P.V.Sorokin, E.F.Venger, E.V.Mitin. New temperature and magnetic field sensors for cryogenic applications developed under a European Project. Proc. of the Twentieth International Cryogenic Engineering Conference (ICEC 20): Beijing, China, 11-14 May 2004, pp.971-974. (Zhang, Liang (EDT) /Lin, Liangzhen (EDT) /Chen, Guobang (EDT) /Publisher: Elsevier Science Ltd Published 2006/03, ISBN:0080445594 (Hard cover book).
V.F.Mitin, N.S.Boltovets, V.V.Basanets, V.V.Kholevchuk, I.Yu.Nemish, F.Pavese, P.C.McDonald. Ge/GaAs thermometers and multisensor for temperature and magnetic field measurements. Proc. of 9th International Symposium on Temperature and Thermal Measurements in Industry and Science, “TEMPMEKO 2004”, Cavtat-Dubrovnik, Croatia, June 21-25, 2004, pp.643-648.
N.S.Boltovets, V.K.Dugaev, V.V.Kholevchuk, P.C.McDonald, V.F.Mitin, I.Yu.Nemish, F.Pavese, P.V.Sorokin, E.A.Soloviev and E.F.Venger, New generation of resistance thermometers based on Ge films on GaAs substrates, Temperature: Its Measurement and Control in Science and Industry, Vol.7, edited by Dean C. Ripple, AIP Conference Proceedings 684, pp.399-404 (2003). Eighth Symposium on Temperature: Its Measurement and Control in Science and Industry, Chicago, USA, October 21-24, 2002.
G.G.Ihas, C.McKenney, V.F.Mitin, V.K.Dugaev. Design of “zero magneto-resistance” Ge thin film thermometers. Bulletin of American Physical Society, Vol. 48, p. 1277 (2003).
V.F.Mitin, N.S.Boltovets, V.V.Kholevchuk, I.Yu.Nemish. Ge-film thermometers and multifunctional sensors for low temperature and magnetic field measurements. Proc. of 2nd International Seminar on Low Temperature Thermometry, Wroclaw, Poland, October 6–7, 2003. Edited by A. Szmyrka-Grzebyk and A. Kowal (INTiBS, Wroclaw, 2003), pp.144 - 150 (invited publication).
V.K.Dugaev, V.F.Mitin. Modeling of characteristics for low-temperature Ge-film sensors. Proc. of 2nd International Seminar on Low Temperature Thermometry, Wroclaw, Poland, October 6–7, 2003. Edited by A. Szmyrka-Grzebyk and A. Kowal (INTiBS, Wroclaw, 2003), pp.151 - 157.
V.F.Mitin, G.G.Ihas, C.McKenney, V.K.Dugaev, M.Vieira. Resistance thermometers based on Ge films on GaAs substrates: low-temperature conduction and magnetoresistance mechanisms. Proc. of 17th European Conference on Solid-State Transducers “Eurosensors XVII”, Edited by J. H. Correia and P. J. French, Guimaraes, University of Minho, Guimarães, Portugal, September 21–24, 2003, ISBN 972-98603-1-9.
V.K.Dugaev, G.G.Ihas, C.McKenney, V.V.Kholevchuk, V.F.Mitin, I.Yu.Nemish, E.A.Soloviev, M.Vieira. Characterization and modelling of Ge film thermometers for low temperature measurements. Proc. of IEEE Sensors 2002, Vol.2 (Piscataway, NJ, 2002), pp.1275 – 1280. First IEEE International Conference on Sensors, Orlando, USA, June 12-14, 2002.
V.F.Mitin, V.V.Kholevchuk, V.K.Dugaev, M.Vieira. Low temperature properties of compensated Ge films used for cryogenic thermometers. In: Defect and Impurity Engineered Semiconductors and Devices III. Editors: S. Ashok, J. Chevallier, N.M. Johnson, B.L. Sopori, H. Okushi. MRS Proceedings, Vol.719 (Materials Research Society, Warrendale, 2002), pp.445–450. 2002 Materials Research Society (MRS) Spring Meeting, San Francisco, USA, April 1 – 5, 2002.
V.F.Mitin, V.V.Kholevchuk, R.V.Konakova, E.F.Venger, V.A.Odarich, O.V.Rudenko, M.P.Semen’ko, M.V.Khimenko. Surface structure and electrical properties of Ge films on semi-insulating GaAs substrates. Proc. of 23th International Conference on Microelectronics (MIEL’02) Nis, Yugoslavia, May 12-15, 2002, Vol.1, pp.401 - 404.
G.G.Ihas, C.M.McKenney, V.F.Mitin, V.K.Dugaev, M.Vieira. Characterization of Ge Thin Film Thermometers. American Physical Society. The 69th Annual Meeting of the Southeastern, abstract #HB.002
N.S.Boltovets, V.V.Kholevchuk, R.V. Konakova, V.F. Mitin and E.F.Venger, Ge-film resistance and Si-based diode temperature microsensors for cryogenic applications, Eurosensors XIV Proceedings, The 14th European Conference on Solid-State Transducers, 27-30 August 2000, Copenhagen, Denmark, pp.527-530 (2000).
N.S.Boltovets, V.V.Kholevchuk, R.V.Konakova, V.F.Mitin, E.F.Venger, Ge-film resistance and Si-based diode temperature microsensors. In: Advanced Semiconductor Devices and Microsystems (2000) pp.235-238. The Third International EuroConference on Advanced Semiconductor Devices and Microsystems, 16-18 October 2000, Smolenice, Slovakia, ASDAM 2000.
V.F.Mitin, Microtermometers based on Ge films for use from 0.02 K to 500 K, Proc. of Symposium on Micro- and Nanocryogenics, Jyvaskyla, Finland, August 1-3, 1999, p.9.
V.F.Mitin, V.V.Kholevchuk, R.V.Konakova, N.S.Boltovets. Temperature microsensors. Proc. of 22th Annual Semiconductor Conference (CAS'99), Sinaia, Romania, October 5-9, 1999, pp.495-498
V.F.Mitin, Miniature resistance thermometers based on Ge films on GaAs, Advances in Cryogenic Engineering, Vol.43, pp.749-756 (1998).
N.S.Boltovets, V.V.Basanets, K.A.Dauletov, V.V.Gavrilenko, V.V.Kholevchuk, R.V.Konakova, V.F.Mitin, M.Oszwaldovski and E.F.Venger, Thermometers based on Ge films. Cryogenics and Refrigeration - Proc. of ICCR’98, Chief Editor Chen Guobang, Internat. Acad. Publishers, Hangzou, China, 21-24 April, 1998, pp.447-450.
K.A.Dauletov, G.N.Kashin, R.V.Konakova, V.G.Lyapin, V.V.Milenin, V.F.Mitin, Some features of interaction between phases in Ge/GaAs heterostructure, Proc. Semiconductor Conference, CAS'98, Sinaia, Romania, 6-10 October, 1998, Vol.1, pp.229-231.
Mitin V.F., Venger E.F., Boltovets N.S., Oszwaldowski M., and Berus T., Germanium film resistance thermometers at low temperatures and in high magnetic fields. Proc. of 11th European Conference on Solid-State Tranducers “Eurosensors XI”, Warsaw, Poland, 21-24 September, 1997, pp.1077-1080.
V.F.Mitin, Ge films on GaAs: preparetion, properties and application to temperature sensors, Proc. of 21th International Conference on Microelectronics (MIEL’97), Vol.2, Nis, Yugoslavia, 14-17 September, 1997, pp.551-554.
N.S.Boltovets, K.A.Dauletov, V.V.Gavrilenko, V.V.Kholevchuk, R.V. Konakova, V.G.Lyapin, V.V.Milenin, V.F.Mitin and E.F.Venger. Physical sensors based on Ge-GaAs heterostructure. Proc. of ICECS’97, Cairo, Egypt, December 15-18, 1997, pp.349-352.
V.F.Mitin, Yu.A.Tkhorik and E.F.Venger, New type of thin-film germanium resistance thermometer for use in a wide temperature range, Proc. of 16th International Cryogenic Engineering Conference / International Cryogenic Materials Conference (ICEC16/ICMC), Kitakyushu, Japan, May 20-24, 1996, pp.653-656.
V.F.Mitin and Yu.A.Tkhorik, Production of sensors for different physical parameters on the base of all-purpose and unified technology, Proc. of 20th International Conference on Microelectronics (MIEL’95),Vol. 2, Nis, Serbia, 12-14 September, 1995, pp.553-557.
V.F.Mitin and Yu.A.Tkhorik, Sensors on the base of Ge-GaAs heterostructure, Proc. of 17th Annual Semiconductor Conference, Sinaia, Romania, 11-16 October, 1994, Vol.2, pp.533-536.
S.A.Vasilkovskii, V.F.Mitin, Yu.A.Tkhorik and V.V.Khalevchuk, Heavily doped and strongly compensated heteroepitaxial germanium films on GaAs, Proc. of 17th Annual Semiconductor Conference, Sinaia, Romania, 11-16 October, 1994, Vol. 1, pp.243-246.
V.F.Mitin, Yu.A.Tkhorik, Temperature, strain, pressure, magnetic field microsensors and photodetectors on base Ge-GaAs heterostructure, Proc. of International Conferense on Sensor Systems and Components (Sensor Techno) , St.Petersburg, Russia, June 22-23, 1993, pp.41-43.
Certificates on inventions:
V.F.Mitin et al, Sensor for measurement of temperature, strain and magnetic field induction, Certificate on Invention (USSR Patent) No.1602156 (1990).
V.F.Mitin et al, A method for measurement of strain in magnetic field, Author’s Certificate on Invention (USSR Patent) No.1511590 (1989).
V.F.Mitin et al, Semiconductor strain sensor, Certificate on Invention (USSR Patent) No.1457543 (1988).
V.F.Mitin et al, Semiconductor strain sensor, Certificate on Invention (USSR Patent) No.1393021 (1988).
V.F.Mitin et al, Photodetector, Certificate on Invention (USSR Patent) No.1380555 (1987)
V.F.Mitin et al, Semiconductor sensor of temperature and magnetic field induction, and a method for its calibration, Certificate on Invention (USSR Patent) No.1204040 (1985).
V.F.Mitin et al, A method for measurement of magnetic field induction, Certificate on Invention (USSR Patent) No.1106259 (1984).
V.F.Mitin et al, Thermoreistor, Certificate on Invention (USSR Patent) No.1085450 (1983).
V.F.Mitin et al, A method for measurement of temperature in magnetic field, Certificate on Invention (USSR Patent) No.1067912 (1983).
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