Project duration: 2010 — 2014 

This project deals with development of novel technology, nano-scale multifunctional materials and devices for application in sensor electronics. 

The project executes in collaboration with the V.Lashkaryov Institute of Semiconductor Physics (Kyiv, Ukraine), State Enterprise Research Institute “Orion” (Kyiv, Ukraine), National Technical University of Ukraine “KPI” (Kyiv, Ukraine), and University of York (Heslington, York, UK). 

The main papers that have emerged from this project:

Papers in Journals:

1. V.F.Mitin, V.K.Lazarov, P.M.Lytvyn, P.J.Hasnip, V.V.Kholevchuk, L.A.Matveeva, E.Yu.Kolyadina, I.E.Kotenko, V.V.Mitin, and E.F.Venger. Tailoring the electrical properties of Ge/GaAs by film deposition rate and preparation of fully compensated Ge films. Physical Review B 84, 125316 (2011).

2. V.K.Lazarov, L.Lari, P.M.Lytvyn, V.V.Kholevchuk and V.F.Mitin. Structural study of Ge/GaAs thin films. Journal of Physics: Conference Series 371, 012040 (2012).

3. V.F. Mitin, V.K. Lazarov, L. Lari, P.M. Lytvyn, V.V. Kholevchuk, L.A. Matveeva, V.V. Mitin, E.F. Venger. Effect of film growth rate and thickness on properties of Ge/GaAs(100). Thin Solid Films 550, 715-722 (2014), http://dx.doi.org/10.1016/j.tsf.2013.10.049  

4. E.F. Venger, P.M. Lytvyn, L.A. Matveeva, V.F. Mitin, V.V. Kholevchuk. Properties and Application of Ge-on-GaAs Thin Nanoheterogeneous Films. ПОЛУЧЕНИЕ, СВОЙСТВА И ПРИМЕНЕНИЕ ТОНКИХ НАНОНЕОДНОРОДНЫХ ПЛЕНОК Ge НА GaAs-ПОДЛОЖКАХ. TKEA — Технология и конструирование в электронной аппаратуре 4, 39-44 (2014).

Papers in Proceedings of International Conferences: 

1. V.F.Mitin, V.K.Lazarov, P.M.Lytvyn, V.V.Kholevchuk, L.A.Matveeva, I.E.Kotenko, V.V.Mitin, E.F.Venger. Effect of deposition rate on properties of thin Ge films on GaAs. Proceedings of the International Conference on the Physics and Technology of Thin Films and Nanosystems (ICPTTFN-XIII), 16-21 May 2011, Ivano-Frankivsk, Ukraine, v. 2, p. 34. 

2. V.F.Mitin, P.M.Lytvyn, V.V.Kholevchuk, L.A.Matveeva, E.Yu.Kolyadina, E.F.Venger V.K.Lazarov, P.J.Hasnip I.E.Kotenko, V.V.Mitin. Nano-thin films of Ge on GaAs: preparation and properties.  Proceedings of the 2nd International Conference on Nanotechnology: Fundamentals and Applications, Ottawa, Ontario, Canada, 28-29 July 2011, Paper No. 283.

3. Е.Ф. Венгер, П.М. Литвин, Л.А. Матвеева, В.В. Митин, В.Ф. Митин, В.В. Холевчук. Влияние скорости осаждения на морфологию поверхности, внутренние механические напряжения, электрические и оптические свойства тонких пленок Ge на GaAs(100). Тезисы докладов 5-ой Международной научно-технической конференции «Сенсорная электроника и микросистемные технологии» (СЕМСТ-5), Украина, Одесса, 4-8 июня 2012 р. – С. 261.

4. V.F. Mitin, P.M. Lytvyn, V.V. Kholevchuk, L.A. Matveeva, V.V. Mitin and E.F. Venger. Effect of Film Growth Rate on Properties of Ge/GaAs Films. Iran-Belarus International Conference on Modern Applications of Nanotechnology (IBCN12) 27-29 June 2012, Minsk, Belarus.

5. V.F. Mitin, P.M. Lytvyn, V.V. Kholevchuk, L.A. Matveeva, V.V. Mitin, O.S. Kulyk, E.F. Venger. Ge/GaAs(100) Thin Films: Large Effect of Film Growth Rate and Thickness on Surface Morphology, Intrinsic Stresses and Electrical Properties . Proceedings of the International Conference Nanomaterials: Applications and Properties Vol. 1 No 3, 03TF17(4pp) (2012). The Crimea, Alushta, Ukraine, September 17-22, 2012.

6. V.F. Mitin, P.M. Lytvyn, V.V. Kholevchuk, V.V. Mitin, E.F. Venger and O.A. Mironov. Ge/GaAs Thin Films  for Thermometer and Bolometer Application. Proceedings of the 2013 IEEE XXXIII International Scientific Conference «Electronics and Nanotechnology» (ELNANO), April 16-19, 2013, Kyiv, Ukraine, p. 56-60.

7. V.V. Kholevchuk, V.P. Kladko, A.V. Kuchuk, P.M. Lytvyn, L.A. Matveeva, V.F. Mitin. Study of Structure and Intrinsic Stresses of Ge Thin Films on GaAs.  Proceedings of the International Conference Nanomaterials: Applications and Properties Vol. 2 No 1, 01PCSI20(4pp) (2013). The Crimea, Alushta, Ukraine, September 14-22, 2013.