New generation of microthermometers and multifunctional sensors for use in cryogenic engineering and low-temperature physics
INTAS Project # 2000-476
INTAS project WORKSHOP September 27-29, 2004
Project duration: July 2001 – September 2004
Supported by the EU in the framework of the INTAS Program. This Project joins together seven
groups of researchers from West- and East-European research centres, universities and
institutes with complementary activities in the field of semiconductor technology, microsystems
and sensors, low-temperature physics, cryogenic thermometry and metrology.
Objective
The main objective of the Project is the development of a new generation of microthermometers and multifunctional sensors for cryogenic applications based on new semiconductor film materials and modern microelectronic and micromachining technologies.
The realisation of the Project will result in the development, investigation and production of a number of types of novel microsensors to measure temperature over the 0.02 to 600 K range in the presence of magnetic fields and under ionising radiation. The Project also includes the development of multifunctional sensors for concurrent measurements of a number of parameters, such as temperature, magnetic field and strain.
Novel physical principles, functional materials and technologies will also be developed for multisensor devices, and prototypes of multifunctional sensors will be produced. The microthermometers and multifunctional sensors proposed in the Project will become the pioneer devices in this field.
The Project involves:- (i) the development of new semiconductor film materials and novel technologies (based on modern microelectronic and micromachining techniques) for manufacturing of various microsensors; (ii) comprehensive investigations of sensor characteristics in the 0.02 to 600 K temperature range, in magnetic fields and under ionising radiation (neutrons and gamma-rays); (iii) theoretical and experimental studies of magnetic field and radiation effects on the sensing materials; (iv) optimisation of the sensor design; (v) device testing; (vi) organisation of production and marketing of sensors developed.
The Project will provide a number of types of new cryogenic semiconductor-film resistance microthermometers that cover the temperature range from 0.02 to 500 K, as well as diode temperature microsensors that are intended for use in the 1 to 600 K temperature range. The results will be of immediate use for the relevant instrumentation industries. Of special importance will be an increase in the number of these devices available for science and industry, that are at present very limited in both choice and commercial availability, and virtually are not produced in the EU countries.
The major subject of this Project is to develop a new and promising topic “Cryogenic microthermometers and multisensors based on semiconductor-film microelectronic and micromachining technologies” that is a novel topic for the European scientific community.
Project participants and contact persons:
CNR — Istituto di Metrologia “G. Colonnetti” (IMGC), Torino, Italy — Coordinator
Institute of Cryogenics (IC), University of Southampton, Southampton, UK
Institute of Semiconductor Physics (ISP) of the National Academy of Sciences of Ukraine, Kiev, Ukraine
Research & Production Company MicroSensor Ltd (MicroSensor), Kiev, Ukraine
Scientific & Research Institute “Orion” (Orion), Kiev, Ukraine
Institute of Materials Science Problems (IMSP) of the National Academy of Sciences of Ukraine, Chernovtsy Department, Chernovtsy, Ukraine
National Science Centre “Kharkov Institute of Physics &Technology” (NSC KIPT), Kharkov, Ukraine
The main relevant papers of the researchers involved in the INTAS-Project (1990-2001):
1. F. Pavese, «Fields of applications: cryogenics«, Chapter 9 in ”Sensors” (a comprehensive book series in eight volumes), Vol. 4 «Thermal Sensors», Eds. H. Scholz and T. Ricolfi, VCH, Weinheim (1990).
2. F. Pavese, P.P.M. Steur, D. Ferri, D. Giraudi, Wang Li, L.I. Zarubin, I.Y. Nemish, Magnetoresistance of Kiev cryogenic doped germanium thermometers up to 6 T, Cryogenics,30 (1990) 437-441.
3. L.I. Zarubin, I.Y. Nemish, A. Szmyrka-Grzebyk, Germanium resistance thermometers with low magnetoresistance, Cryogenics,30 (1990) 533-538.
4. T. Haruyama, P.C. McDonald, Evaluation of simple constant current sources for silicon diode thermometers, Meas. Sci. Technol.,3 (1992) 713-717.
5. V. Mitin, Microsensors of temperature, magnetic field, and strain, Cryogenics,34 (1994) 437-440.
6. K. Pateman, P. McDonald, M.A. Brumell, Magnetic field effects on temperature sensing diodes, Institute of Physics — Condensed Matter and Materials Physics Conference, Birmingham, December 1994.
7. P.C. McDonald, Diode temperature transducers for process systems, Cryogenics,35 (1995) 199-201.
8. F. Pavese, V.M. Malyshev P.P.M. Steur, D. Ferri, D. Giraudi, Routine calibration of cryogenic thermometers in the range 1.7-350 K with an accuracy up to the millikelvin level, and measurement of fixed points in sealed cells with a fully automated and self-contained modular apparatus, Advances in Cryogenic Engineering.,41B (1996) 1683-1690.
9. D. Giraudi, P.P.M. Steur, D. Ferri, F. Pavese, The resistance-temperature characteristics of the new Cernox-type cryogenic thermometers in the range 1.5-350 K, TEMPMEKO 97 (1997) 155-156.
10. V.F. Mitin, Yu.A. Tkhorik, E.F. Venger, All-purpose technology of physical sensors on the base of Ge/GaAs heterostructures, Microelectronics J.,28 (1997) 617-625.
11. D.J. Gowlett, P.C. McDonald, The effect of energisation current on the calibration of silicon diode thermometers, Proc. of the Seventh International Cryogenic Engineering Conference ICEC 17, Bournemouth, 14th-17th July 1998.
12. V.F. Mitin, Ge/GaAs heterostructures: preparation, properties, and application to sensors, Molecular Phys. Reports.,21 (1998) 71-78.
13. V.F. Mitin, E.F. Venger, N.S. Boltovets, M. Oszwaldowski, T. Berus, Low-temperature Ge film resistance thermometers, Sensors and Actuators A, 68 (1998) 303-306.
14. 
V.F. Mitin, Miniature resistance thermometers based on Ge films on GaAs, Advances in Cryogenic Engineering, 43 (1998) 749-756.
15. V.F. Mitin, Resistance thermometers based on the germanium films, Semiconductor Physics, Quantum Electronics & Optoelectronics,2 (1999) 115-123.
16. N.S. Boltovets, V.V. Basanets, V.N. Ivanov, V.A. Krivutsa, A.E. Belyaev, R.V. Konakova, V.G. Lyapin, V.V. Milenin, E.A. Soloviev, E.F. Venger, D.I. Voitsikhovskyi, V.V. Kholevchuk, V.F. Mitin, Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals, Semiconductor Physics, Quantum Electronics & Optoelectronics, 3 (2000) 359-370.
17. V. Mitin, J. McFarland, G. G. Ihas, V.K. Dugaev, Ge film thermometers at ultralow temperatures in high magnetic fields, Physica B, 284-288 (2000) 1996-1997.
18. N.S. Boltovets, V.V. Kholevchuk, R.V. Konakova, V.F. Mitin, E.F. Venger, Ge-film resistance and Si-based diode temperature microsensors for cryogenic applications, Sensors and Actuators A,92 (2001) 191-196.
The main scientific papers that have emerged from the Project:
1. N.S.Boltovets, V.K.Dugaev, V.V.Kholevchuk, P.C.McDonald, V.F.Mitin, I.Yu.Nemish, F.Pavese, I.Peroni, P.V.Sorokin, E.A.Soloviev, E.F.Venger, New generation of resistance thermometers based on Ge films on GaAs substrates., Themperature: Its Measurement and Control in Science and Industry, 7, edited by Dean C. Ripple, AIP, Chicago, (2003), pp.399-404.
2. V.K.Dugaev, G.G.Ihas, C.McKenney, V.V.Kholevchuk, V.F.Mitin, I.Yu.Nemish, E.A.Soloviev, M.Vieira. Characterization and modelling of Ge film thermometers for low temperature measurements. Proceedings of 1st IEEE International Conference on Sensors (IEEE Sensors 2002), pp. 1275-1280, Orlando, USA, June 12-14, 2002.
3. V.F.Mitin, V.V.Kholevchuk, V.K.Dugaev, M.Vieira. Low temperature properties of compensated Ge films used for cryogenic thermometers. 2002 MRS Spring Meeting, San Francisco, USA, April 1 — 5, 2002. In: Defect and Impurity Engineered Semiconductors and Devices III. Editors: S. Ashok, J. Chevallier, N.M. Johnson, B.L. Sopori, H. Okushi. Materials Research Society Proceedings, vol. 719, (2002).
4. V.F.Mitin, V.V.Kholevchuk, R.V.Konakova, E.F.Venger, V.A.Odarich, O.V.Rudenko, M.P.Semen’ko, M.V.Khimenko. Surface structure and electrical properties of Ge films on semi-insulating GaAs substrates. Proceedings of 23th International Conference on Microelectronics (MIEL’02), vol. 1, pp. 401-404, Nis, Yugoslavia, May 12-15, 2002.
5. M.Oszwaldowski, T.Berus, V.K.Dugaev. Weak localization in InSb thin films heavily doped with lead. Physical Review B, 65 (23), (2002) 235418/1-6.
6. V.K.Dugaev, V.L.Volkov, M.Oszwaldowski, M.Vieira. Energy relaxation at inelastic scattering of electrons from localized states. Technical Physics Letters, 28 (21), (2002) 51-56.
7. Gary Ihas, Chris McKenney, Vadim Mitin, and Vitali Dugaev. Design of «Zero Magneto-resistance» Ge Thin Film Thermometers. Bull. American Physical Society, 48, (2003) p. 1277.
8. V.F.Mitin, P.C.McDonald, F.Pavese, N.S.Boltovets, V.V.Kholevchuk, I.Yu.Nemish, V.V.Basanets, V.K.Dugaev, P.V.Sorokin, E.F.Venger, E.V.Mitin. New temperature and magnetic field sensors for cryogenic applications developed under a European Project. ICEC 20, 11-14 May 2004, Beijing, China, pp.971-974. (Zhang, Liang (EDT) /Lin, Liangzhen (EDT) /Chen, Guobang (EDT) /Publisher: Elsevier Science Ltd Published 2006/03, ISBN:0080445594 (Hard cover book).
9. V.K.Dugaev, J.Berakdar, J.Barnas, W.Dobrowolski, V.F.Mitin, M.Vieira. Magnetoresistance due to domain walls in semiconducting magnetic nanostructures. Materials Science and Engineering C 25, pp.705-709 (2005).
10. V.K.Dugaev, J.Barnaś, J.Berakdar, V.I.Ivanov, W.Dobrowolski, V.F.Mitin. Magnetoresistance of a semiconducting magnetic wire with domain wall. Physical Review B, Vol. 71 No. 2, 024430 (2005).
11. V.F. Mitin, N.S. Boltovets, V.V. Basanets, V.V. Kholevchuk, I.Yu. Nemish, F. Pavese, P.C. McDonald. Ge/GaAs thermometers and multisensor for temperature and magnetic field measurements. Proceedings of 9th International Symposium on Temperature and Thermal Measurements in Industry and Science, “TEMPMEKO 2004”, Cavtat-Dubrovnik, Croatia, June 21-25, 2004, pp. 643-648.
12. V.F. Mitin, N.S. Boltovets, V.V. Basanets, V.V. Kholevchuk, I.Yu. Nemish, E.V.Mitin, P.C. McDonald, F. Pavese. New thermometers and multisensors for cryogenic temperature and magnetic field measurements. Advances in Cryogenic Engineering, Vol. 51, pp.1243-1250 (2006).
13. V.F. Mitin, N.S. Boltovets, V.V. Basanets, V.V. Kholevchuk, I.Yu. Nemish, E.V. Mitin, F. Pavese, P.C. McDonald, New accurate multisensor for cryogenic temperature and magnetic field measurements. Proceedings of 21st International Cryogenic Engineering Conference (ICEC 20), Prague, Czech Republic, July 17-21, 2006.
14. P.C. McDonald, E. Jaramillo, B. Baudouy, Thermal design of the CFRP support struts for the spatial framework of the Herschel Space Observatory. Cryogenics, 46, 298–304 (2006).
15. V.F. Mitin, P.C. McDonald, F. Pavese, N.S. Boltovets, V.V. Kholevchuk, I.Yu. Nemish, V.V. Basanets, V.K. Dugaev, P.V. Sorokin, R.V. Konakova, E.F. Venger, E.V. Mitin, Ge-on-GaAs film resistance thermometers for cryogenic applications. Cryogenics, Vol. 47, pp. 474-482 (2007).