Current affiliations:

1. Director (CEO) and co-founder of «MicroSensor», Research & Production Company (Kyiv, Ukraine)

2. Head of the Laboratory “Physical and technological problems of sensors electronics” at the V. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine (Kyiv, Ukraine)

 

http://www.researchgate.net/profile/Vadim_Mitin                         

 

 

 

Address for communication:

V.F. Mitin

V. Lashkaryov Institute of Semiconductors Physics National Academy of Sciences of Ukraine

41 Prospect Nauki, 03028, Kyiv, Ukraine.

Tel./Fax: (380-44) 525-59-39

Tel.: (380-44) 525-37-05

E-mail: mitin@isp.kiev.ua

or/and 

MicroSensor Company

4 Lysogirska st., 03680 Kyiv, Ukraine

Tel./Fax: (380-44) 525-59-39

Tel.: (380-44) 525-37-05

E-mail: mitin@microsensor.com.ua


Education and Degrees:

1. Diploma of Engineer in Electronics Engineering with a specialty in semiconductors and dielectrics (Faculty of Radioelectronics) from the Kiev Polytechnic Institute, Kyiv, 1982.

2. Ph.D. with a specialty in physics of semiconductors and dielectrics from the V.E. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine, Kyiv, 1990.

Dissertation:  «Development, investigation and application of heavily doped and compensated heteroepitaxial germanium films on gallium arsenide», 1990. 

Research interests are in the following areas:  technology of semiconductor films; structural, electrical, magnetic and optical properties of semiconductors, semiconducting films and heterostructures; micro and nanotechnologies; microsystems; temperature, magnetic field, strain, pressure and optical radiation sensors; low-temperature physics; cryogenic engineering; cryogenic thermometry and metrology.

Research experience and publications:  scientific publications include a book; more than 60 articles in the refereed international scientific journals; more than 50 presentations at the international conferences and publications in conference proceedings; 3 patents and 9 certificates of inventions.  

List of main publications:      

Book:  

«Effect of active actions on the properties of semiconductor materials and structures» E.D.Atanassova, A.E.Belyaev, R.V.Konakova, P.M.Lytvyn, V.V.Milenin, V.F.Mitin, V.V.Shynkarenko — Kharkiv: NTC «Inst. for Single Crystals», 2007.- pages — 216 (book). 

 

 

 

Articles in journals and books of international conference proceedings:

 


2017 

V. F. Mitin, V. V. Kholevchuk, and E. A. Soloviev „High positive magnetoresistance in Ge films at low temperaturesApplied Physics Letters, 110, 012102 (2017); http://dx.doi.org/10.1063/1.4973494.


2014 

Венгер Е.Ф., Литвин П.М., Матвеева Л.А., Митин В.Ф., Холевчук В.В. Тонкие случайно нанонеоднородные пленки Ge на GaAs: получение, свойства и применение. – В кн.: Наноразмерные системы и наноматериалы: исследования в Украине / под общей редакци редакцией академика НАН Украины А.Г. Наумовца. Киев: Академпериодика. – 2014. – С. 175-179.

V.M. PuzikovA.V. LopinA.V. SemenovA.A. KozlovskiN.S. BoltovetsV.А. Kryvutsa, V.F. Mitin, V.V. KholevchukЗащитные покрытия ВЧ р-i-n диодов и терморезистивные сенсоры температуры на основе пленок нанокристаллического SiC. — В кн.: Наноразмерные системы и наноматериалы: исследования в Украине / под общей редакци редакцией академика НАН Украины А.Г. Наумовца. Киев: Академпериодика. – 2014. – С. 186 — 191.

V.F. Mitin, V.K. Lazarov, L. Lari, P.M. Lytvyn, V.V. Kholevchuk, L.A. Matveeva, V.V. Mitin, E.F. Venger. Effect of film growth rate and thickness on properties of Ge/GaAs(100)Thin Solid Films 550, 715-722 (2014).

Венгер Е.Ф., Литвин П.М., Матвеева Л.А., Митин В.Ф., Холевчук В.В. Получение, свойства и применение тонких нанонеоднородных плёнок Ge на GaAs-подложках. // Технология и конструирование в электронной аппаратуре. – 2014 – № 4 – С. 39-44.

Болтовець М.С., Венгер Є.Ф., Голинна Т.І., Литвин П.М., Матвеєва Л.О., Мітін В.Ф., Слєпова О.С., Холевчук В.В. Спосіб виготовлення терморезистора // Патент України на корисну модель № 95630, Бюл. № 24 від 25.12.2014 р.

Бєляєв О.Є., Болтовец М.С., Веремійченко Г.М., Конакова Р.В., Кривуца В.А., Мітін В.Ф., Пузіков В.М., Семенов О.В., Холевчук В.В., Шеремет В.М. Датчик температури // Патент України на корисну модель № 93207, Бюл. №18 від 25.09.2014 р.


2013 

V.V. Kholevchuk, V.P. Kladko, A.V. Kuchuk, P.M. Lytvyn, L.A. Matveeva, V.F. Mitin. Study of Structure and Intrinsic Stresses of Ge Thin Films on GaAs. Proceedings of the International Conference Nanomaterials: Applications and Properties Vol. 2 No 1, 01PCSI20(4pp) (2013). The Crimea, Alushta, Ukraine, September 14-22, 2013.

V.F. Mitin, P.M. Lytvyn, V.V. Kholevchuk, V.V. Mitin, E.F. Venger and O.A. Mironov. Ge/GaAs Thin Films for Thermometer and Bolometer Application. Proceedings of the 2013 IEEE XXXIII International Scientific Conference «Electronics and Nanotechnology» (ELNANO), April 16-19, 2013, Kyiv, Ukraine, p. 56-60.


2012 

E. Atanassova, P. Lytvyn, S.N. Dub, R.V. Konakova, V.F. Mitin and D. Spassov. Nanomechanical properties of pure and doped Ta2O5 and the effect of microwave irradiation. Journal of Physics D: Appl. Phys. 45 (2012) 475304 (13 pp).

V.K.Lazarov, L.Lari, P.M.Lytvyn, V.V.Kholevchuk and V.F.Mitin. Structural study of Ge/GaAs thin films. Journal of Physics: Conference Series 371, 012040 (2012).

V.F. Mitin, P.M. Lytvyn, V.V. Kholevchuk, L.A. Matveeva, V.V. Mitin, O.S. Kulyk, E.F. Venger. Ge/GaAs(100) Thin Films: Large Effect of Film Growth Rate and Thicknesses on Surface Morphology, Intrinsic Stresses and Electrical Properties. Proceedings of the International Conference Nanomaterials: Applications and Properties Vol. 1 No 3, 03TF17(4pp) (2012). The Crimea, Alushta, Ukraine, September 17-22, 2012.

V.F. Mitin, P.M. Lytvyn, V.V. Kholevchuk, L.A. Matveeva, V.V. Mitin and E.F. Venger. Effect of Film Growth Rate on Properties of Ge/GaAs Films. Iran-Belarus International Conference on Modern Applications of Nanotechnology (IBCN12) 27-29 June 2012, Minsk, Belarus.

Е.Ф. Венгер, Е.С. Кулик, В.В. Митин, В.Ф. Митин, И.Ю. Немиш, В.В. Холевчук. ХАРАКТЕРИСТИКИ РЕЗИСТИВНЫХ И ДИОДНЫХ КРИОГЕННЫХ МИКРОТЕРМОМЕТРОВ. Тезисы докладов 5-ой Международной научно-технической конференции «Сенсорная электроника и микросистемные технологии» (СЕМСТ-5), Украина, Одесса, 4-8 июня 2012 р. – С. 65.

Е.Ф. Венгер, П.М. Литвин, Л.А. Матвеева, В.В. Митин, В.Ф. Митин, В.В. Холевчук. Влияние скорости осаждения на морфологию поверхности, внутренние механические напряжения, электрические и оптические свойства тонких пленок Ge на GaAs(100). Тезисы докладов 5-ой Международной научно-технической конференции «Сенсорная электроника и микросистемные технологии» (СЕМСТ-5), Украина, Одесса, 4-8 июня 2012 р. – С. 261.


2011 

V.F.Mitin, V.K.Lazarov, P.M.Lytvyn, P.J.Hasnip, V.V.Kholevchuk, L.A.Matveeva, E.Yu.Kolyadina, I.E.Kotenko, V.V.Mitin, and E.F.Venger. Tailoring the electrical properties of Ge/GaAs by film deposition rate and preparation of fully compensated Ge films Physical Review B 84, 125316 (2011). 

V.F.Mitin, V.V.Kholevchuk, B.P.Kolodych. Ge-on-GaAs film resistance thermometers: low-temperature conduction and magnetoresistanceCryogenics 51, 68-73 (2011). 

E.Atanassova, P.Lytvyn, R.V.Konakova, V.F.Mitin, D.Spassov. Conducting and topographic AFM analysis of Hf-doped and Al-doped Ta2O5 filmsThin Solid Films 519, 8182-8190 (2011).

V.F.Mitin, P.M.Lytvyn, V.V.Kholevchuk, L.A.Matveeva, E.Yu.Kolyadina, E.F.Venger V.K.Lazarov, P.J.Hasnip I.E.Kotenko, V.V.Mitin. Nano-thin films of Ge on GaAs: preparation and properties. Proceedings of the 2nd International Conference on Nanotechnology: Fundamentals and Applications, Ottawa, Ontario, Canada, 28-29 July 2011, Paper No. 283.

V.F.Mitin, V.K.Lazarov, P.M.Lytvyn, V.V.Kholevchuk, L.A.Matveeva, I.E.Kotenko, V.V.Mitin, E.F.Venger. Effect of deposition rate on properties of thin Ge films on GaAs. Proceedings ofInternational Conference on the Physics and Technology of Thin Films and Nanosystems (ICPTTFN-XIII), 16-21 May 2011, Ivano-Frankivsk, Ukraine, v. 2, p. 34.   


2010 

Є.Ф.Венгер, А.С.Зенкін, Н.Л.Козелло, Б.П.Колодич, Н.М.Криницька, О.С.Кулик, В.Ф.Мітін, І.Ю.Неміш, В.В.Холевчук. Мініатюрні кремнієві діодні та германієві резистивні термометри для вимірювання низьких температур. Фізика і хімія твердого тіла (Physics and Chemistry of Solid State), 2, 499 (2010). 

E.Atanassova, R.V.Konakova, V.F.Mitin, D.Spassov, Trap parameters and conduction mechanism in HfO2–Ta2O5 mixed stacks in response to microwave irradiation. Microelectronic Engineering, 87, 2294-2300 (2010).  V.F.

Mitin. Preparation and properties of heavily doped and strongly compensated Ge films on GaAs. Journal of Applied Physics, 107, 033720 (2010). 


2009 

Є.Ф.Венгер, Р.В.Конакова, Л.О.Матвеєва, І.М.Матіюк, В.Ф.Мітін, Є.В.Мітін, В.А.Одарич, О.В.Руденко, М.П.Семенько, М.В.Хименко, В.В.Холевчук. Плівки германію на арсеніді галію: структурні, електронні та оптичні властивості. Фізика і хімія твердого тіла (Physics and Chemistry of Solid State), 2, 315 (2009). 

E.Atanassova, P.Lytvyn, R.V.Konakova, V.F.Mitin and D.Spassov. Conductive-atomic force microscopy characterization of Ta2O5/SiO2 stacks and the effect of microwave irradiation. Journal of Physics D: Applied Physics, 42, 145301 (2009).

Е.Ф.Венгер, В.Ф.Митин, В.В.Холевчук, Л.А.Матвеева, Е.Ю.Колядина, Р.В.Конакова. Влияние СВЧ излучения на особенности структурной релаксации гетеросистем Ge-GaAs и электронных свойств пленок Ge на полуизолирующем GaAs. 8-я Международная конференция «Взаимодействие излучений с твердым телом», 23-25 сентября 2009 г., Минск, Беларусь, с. 157-159 (2009) [8-th International Conference “Interaction of Radiation with Solids”, September 23-25, 2009, Minsk, Belarus pp. 157-159 (2009)].  


2008 

V.F.Mitin. Heavily doped and fully compensated Ge single-crystalline films on GaAs.  Applied Physics Letters, 92, 202111 (2008). 

V.F.Mitin, N.S.Boltovets, V.V.Kholevchuk, V.V.Basanets, E.V.Mitin, P.C.McDonald, F.Pavese. Dual function sensors for concurrent measurements of temperature and magnetic fields in cryogenic applications.. Cryogenics, Vol. 48, pp. 413-416 (2008). 

E.Yu.Kolyadina, R.V.Konakova, L.A.Matveeva, V.F.Mitin, V.V.Shynkarenko, E.Atanassova. Microwave induced structural-impurity ordering of transition region in Ta2O5 stacks on Si. Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol. 11, N.4, pp. 311-318 (2008). 

E.Atanassova, V.F.Mitin, R.V.Konakova, D.Spassov and V.V.Schinkarenko. Microwave irradiation impact on Ta2O5 stack capacitors with different gates. Semiconductor Science and Technology Vol. 23, No. 3, 035004 (2008). 

E.Atanassova, R.V.Konakova, V.F.Mitin, D.Spasov, O.S.Lytvyn, V.V.Schinkarenko. Microwave irradiation effect on Ti-doped Ta2O5 stacked capacitors. Recent Patents on Electrical Engineering, Vol. 1, pp. 47-58 (2008). 

В.Ф. Митин, В.В. Холевчук, И.Ю. Немиш, Е.В. Митин, Н.С. Болтовец. Термометры сопротивления и многофункциональные сенсоры для одновременного измерения температуры и магнитного поля. Новые промышленные технологии, № 5, с. 29-33 (2008). 


2007 

V.F.Mitin, V.K.Dugaev, G.G.Ihas. Large negative magnetoresistance in Ge films at ultralow temperatures and low magnetic fields. Applied Physics Letters, Vol. 91, Issue 20, 202107 (2007). 

V.F.Mitin, P.C.McDonald, F.Pavese, N.S.Boltovets, V.V.Kholevchuk, I.Yu.Nemish, V.V.Basanets, V.K.Dugaev, P.V.Sorokin, R.V.Konakova, E.F.Venger, E.V.Mitin. Ge-on-GaAs film resistance thermometers for cryogenic applications. Cryogenics, Vol. 47, pp. 474-482 (2007). 


2006  N.S.Boltovets, V.V.Kholevchuk, R.V.Konakova, Ya.Ya.Kudryk, P.M.Lytvyn, V.V.Milenin, V.F.Mitin, E.V.Mitin. A silicon carbide thermistor. Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol. 9, N.4, pp. 67-70 (2006). 

N.S.Boltovets, R.V.Konakova, Ya.Ya.Kudryk, V.V.Milenin, V.F.Mitin, E.V.Mitin, O.S.Lytvyn, L.M.Kapitanchuk. Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures. Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol. 9, N.2, pp. 58-60 (2006).

V.F.Mitin, N.S.Boltovets, V.V.Basanets, V.V.Kholevchuk, I.Yu.Nemish, E.V.Mitin, P.C.McDonald, F.Pavese, New thermometers and multisensors for cryogenic temperature and magnetic field measurements. Advances in Cryogenic Engineering, Vol.51, pp.1243-1250 (2006). AIP Conference Proceedings 823: Transactions of the Cryogenic Engineering Conference (CEC).

V.F.Mitin, N.S.Boltovets, V.V.Basanets, V.V.Kholevchuk, I.Yu.Nemish, E.V.Mitin, F.Pavese, P.C.McDonald, New accurate multisensor for cryogenic temperature and magnetic field measurements. Proc. of 21st International Cryogenic Engineering Conference (ICEC 20), Prague, Czech Republic, July 17-21, 2006. 

V.F.Mitin, V.V.Kholevchuk, N.S.Boltovets, I.Yu.Nemish, E.V.Mitin, E.F.Venger, F.Pavese, P.C.McDonald and G.G.Ihas, Review of Ge-GaAs Thermometers and Multisensors for Measurement of Temperature and Magnetic Field in Cryogenic Applications. Proc. of 24th International Conference on Low Temperature Physics, Orlando, Florida, USA, August 10-17, 2005, AIP Conference Proceedings 850, pp.1595-1596 (2006). 

V.F.Mitin, V.K.Dugaev, G.G.Ihas, Condution and magnetoresistance mechanisms in Ge-films used foe low temperature resistance thermometers. Proc. of 24th International Conference on Low Temperature Physics, Orlando, Florida, USA, August 10-17, 2005, AIP Conference Proceedings 850, pp.1472-1473 (2006). 

Yihui Zhou, Vadim F. Mitin, Greg Labbe, Shu-chen Liu, Ridvan Adjimambetov, and Gary G. Ihas, Sub-millimeter Size Sensors for Measurements in Cryogenic Turbulence. Proc. of 24th International Conference on Low Temperature Physics, Orlando, Florida, USA, August 10-17, 2005, AIP Conference Proceedings 850, pp.1631-1632 (2006).


2005 

V.K.Dugaev, J.Berakdar, J.Barnas, W.Dobrowolski, V.F.Mitin, M.Vieira. Magnetoresistance due to domain walls in semiconducting magnetic nanostructures. Materials Science and Engineering C, 25, pp. 705-709 (2005). 

V.K.Dugaev, J.Barnaś, J.Berakdar, V.I.Ivanov, W.Dobrowolski, V.F.Mitin. Magnetoresistance of a semiconducting magnetic wire with domain wall. Physical Review B, Vol. 71, No. 2, 024430 (2005). 

E.Atanassova, R.V.Konakova, V.F.Mitin, J.Koprinarova, O.S.Lytvyn, O.B.Okhrimenko, V.V.Schinkarenko, D.Virovska, Effect of microwave radiation on the properties of Ta2O5-Si microstructures. Microelectronics Reliability, Vol. 45, pp. 123-135 (2005). 


2004 

G.G.Ihas, V.F.Mitin, and N.S.Sullivan. Cryogenic mass gauging in a free-falling storage tank. Journal of Low Temperature Physics, Vol. 134 (1-2) pp. 437-442 (2004).

V.F.Mitin, P.C.McDonald, F.Pavese, N.S.Boltovets, V.V.Kholevchuk, I.Yu.Nemish, V.V.Basanets, V.K.Dugaev, P.V.Sorokin, E.F.Venger, E.V.Mitin. New temperature and magnetic field sensors for cryogenic applications developed under a European Project. Proc. of the Twentieth International Cryogenic Engineering Conference (ICEC 20): Beijing, China, 11-14 May 2004, pp.971-974. (Zhang, Liang (EDT) /Lin, Liangzhen (EDT) /Chen, Guobang (EDT) /Publisher: Elsevier Science Ltd Published 2006/03, ISBN:0080445594 (Hard cover book). 

V.F.Mitin, N.S.Boltovets, V.V.Basanets, V.V.Kholevchuk, I.Yu.Nemish, F.Pavese, P.C.McDonald. Ge/GaAs thermometers and multisensor for temperature and magnetic field measurements. Proc. of 9th International Symposium on Temperature and Thermal Measurements in Industry and Science, “TEMPMEKO 2004”, Cavtat-Dubrovnik, Croatia, June 21-25, 2004, pp.643-648.  


2003 

V.F.Mitin, N.S.Boltovets, V.V.Kholevchuk, I.Yu.Nemish. Ge-film thermometers and multifunctional sensors for low temperature and magnetic field measurements. Proc. of 2nd International Seminar on Low Temperature Thermometry, Wroclaw, Poland, October 6–7, 2003. Edited by A. Szmyrka-Grzebyk and A. Kowal (INTiBS, Wroclaw, 2003), pp.144 — 150 (invited publication). 

V.K.Dugaev, V.F.Mitin. Modeling of characteristics for low-temperature Ge-film sensors. Proc. of 2nd International Seminar on Low Temperature Thermometry, Wroclaw, Poland, October 6–7, 2003. Edited by A. Szmyrka-Grzebyk and A. Kowal (INTiBS, Wroclaw, 2003), pp.151 — 157.

G.G.Ihas, C.McKenney, V.F.Mitin, V.K.Dugaev. Design of “zero magneto-resistance” Ge thin film thermometers. Bulletin of American Physical Society, Vol. 48, p. 1277 (2003). 


2002 

V.K.Dugaev, G.G.Ihas, C.McKenney, V.V.Kholevchuk, V.F.Mitin, I.Yu.Nemish, E.A.Soloviev, M.Vieira. Characterization and modelling of Ge film thermometers for low temperature measurementsProc. of IEEE Sensors 2002, Vol.2 (Piscataway, NJ, 2002), pp.1275 – 1280. First IEEE International Conference on Sensors, Orlando, USA, June 12-14, 2002. 

V.F.Mitin, V.V.Kholevchuk, V.K.Dugaev, M.Vieira. Low temperature properties of compensated Ge films used for cryogenic thermometers. In: Defect and Impurity Engineered Semiconductors and Devices III. Editors: S. Ashok, J. Chevallier, N.M. Johnson, B.L. Sopori, H. Okushi. MRS Proceedings, Vol.719 (Materials Research Society, Warrendale, 2002), pp.445–450. 2002 Materials Research Society (MRS) Spring Meeting, San Francisco, USA, April 1 – 5, 2002. 

V.F.Mitin, V.V.Kholevchuk, R.V.Konakova, E.F.Venger, V.A.Odarich, O.V.Rudenko, M.P.Semen’ko, M.V.Khimenko. Surface structure and electrical properties of Ge films on semi-insulating GaAs substratesProc. of 23th International Conference on Microelectronics (MIEL’02) Nis, Yugoslavia, May 12-15, 2002, Vol.1, pp.401 — 404. 

G.G.Ihas, C.M.McKenney, V.F.Mitin, V.K.Dugaev, M.Vieira. Characterization of Ge Thin Film Thermometers. American Physical Society. The 69th Annual Meeting of the Southeastern, abstract #HB.002. 

N.S.Boltovets, V.K.Dugaev, V.V.Kholevchuk, P.C.McDonald, V.F.Mitin, I.Yu.Nemish, F.Pavese, P.V.Sorokin, E.A.Soloviev and E.F.Venger, New generation of resistance thermometers based on Ge films on GaAs substrates, Temperature: Its Measurement and Control in Science and Industry, Vol.7, edited by Dean C. Ripple, AIP Conference Proceedings 68span style=»font-size: small; font-family: ‘tahoma’, ‘arial’, ‘helvetica’, sans-serif;»4, pp.399-404 (2003). Eighth Symposium on Temperature: Its Measurement and Control in Science and Industry, Chicago, USA, October 21-24, 2002. 


2001 

N.S.Boltovets, V.V.Kholevchuk, R.V.Konakova, V.F.Mitin and E.F.Venger, Ge-film resistance and Si-based diode temperature microsensors for cryogenic applications, Sensors and Actuators A Vol. 92, pp. 191-196 (2001). 

E.Atanassova, A.Paskaleva, R.Konakova, D.Spassov, V.F.Mitin, Influence of radiation on thin Ta2O5-Si structures, Microelectronics Journal 32 pp. 553-562 (2001). 

V.A.Odarich, O.V.Rudenko, M.P.Semen’ko, R.V.Konakova, V.F.Mitin, V.V.Kholevchuk, Ellipsometric studies of amorphous germanium films on single-crystalline gallium arsenide substrates, Functional Materials, Vol. 8 No. 2 pp. 355-360 (2001). 


2000 

V.F.Mitin, N.S.Boltovets, V.V.Kholevchuk, R.V.Konakova. Germanium-Film Resistance Microthermometers Intended for Operation within the Temperature Range of 0.03-300 K.Inzhenerno-Fizicheskii Zhurnal [Journal of Engineering Physics and Thermophysics] Vol. 73, No. 1, pp. 202-205 (2000). 

V.Mitin, J.McFarland, G.Ihas, V.К.Dugaev. Ge film thermometers at ultralow temperatures in high magnetic fields, Physica B: Condensed Matter, Vol. 284-288, pp. 1996-1997 (2000). 

A.E.Belyaev, R.V.Konakova, V.V.Milenin, E.A.Soloviev, D.I.Voitsikhovskyi, N.S.Boltovets, V.V.Basanets, V.A.Krivutsa, V.F.Mitin. Development and investigation of oscillator diodes for the millimeter wavelength range, Romanian Journal of Information Science and Technology, Vol. 3, No. 1, pp. 5-15 (2000). 

N.S.Boltovets, V.V.Basanets, V.N.Ivanov, V.A.Krivutsa, A.E.Belyaev, R.V.Konakova, V.G.Lyapin, V.V.Milenin, E.A.Soloviev, E.F.Venger, D.I.Voitsikhovski, V.V.Kholevchuk, V.F.Mitin.Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals. Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol. 3, No. 3, pp. 359-370 (2000).

N.S.Boltovets, V.V.Kholevchuk, R.V. Konakova, V.F. Mitin and E.F.Venger, Ge-film resistance and Si-based diode temperature microsensors for cryogenic applications, Eurosensors XIV Proceedings, The 14th European Conference on Solid-State Transducers, 27-30 August 2000, Copenhagen, Denmark, pp.527-530 (2000). 

N.S.Boltovets, V.V.Kholevchuk, R.V.Konakova, V.F.Mitin, E.F.Venger, Ge-film resistance and Si-based diode temperature microsensors. In: Advanced Semiconductor Devices and Microsystems (2000) pp.235-238. The Third International EuroConference on Advanced Semiconductor Devices and Microsystems, 16-18 October 2000, Smolenice, Slovakia, ASDAM 2000. 

V. F. Mitin, V. V. Kholevchuk, S. Matyjasik, and M. Oszwaldowski, in Proceedings of the Fourth European Workshop on Low Temperature Electronics, WOLTE-4, Netherlands, 21–23 June 2000.


1999

V.F.Mitin. Resistance thermometers based on the germanium films. Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol. 2, No. 1, pp.115-123 (1999).

K.A.Dauletov, G.N.Kashin, R.V.Konakova, V.V.Milenin, V.F.Mitin. Heat-resistance Shottku diode based on Ge/GaAs heterostructure. Journal of Surface Investigation. X-Ray, Synchrotron and Neutron Techniques No.3, pp.60-62 (1999) [in Russian].

V.F.Mitin, V.V.Kholevchuk, R.V.Konakova, N.S.Boltovets. Temperature microsensorsProc. of 22th Annual Semiconductor Conference (CAS’99), Sinaia, Romania, October 5-9, 1999, pp.495-498.

V.F.Mitin. Microtermometers based on Ge films for use from 0.02 K to 500 K. Proc. of Symposium on Micro- and Nanocryogenics, Jyvaskyla, Finland, August 1-3, 1999, p.9.

V.F.Mitin, J.McFarland, G.Ihas, and V.K.Dugaev. Ge film thermometers at ultralow temperatures in high magnetic fields. The 22th International Conference on Low Temperature Physics (LT-22), Helsinki, Finland (1999).  


1998

V.F.Mitin. Ge/GaAs heterostructure: preparation, properties, and application to sensors. Molecular Physics Reports, Vol.21, pp.71-78 (1998).

V.F.Mitin, E.F.Venger, N.S.Boltovets, M.Oszwaldowski and T.Berus. Low-temperatue Ge film resistance thermometers. Sensors and Actuators A, Vol. 68, No. 1-3, pp. 303-306 (1998). V.F.Mitin. Miniature temperature sensors based on Ge films. J. Phys. IV France, Vol.8, pp.193-195 (1998).

V.F.Mitin, Miniature resistance thermometers based on Ge films on GaAs, Advances in Cryogenic Engineering, Vol.43, pp.749-756 (1998). 

N.S.Boltovets, V.V.Basanets, K.A.Dauletov, V.V.Gavrilenko, V.V.Kholevchuk, R.V.Konakova, V.F.Mitin, M.Oszwaldovski and E.F.Venger, Thermometers based on Ge films. Cryogenics and Refrigeration — Proc. of ICCR’98, Chief Editor Chen Guobang, Internat. Acad. Publishers, Hangzou, China, 21-24 April, 1998, pp.447-450. 

K.A.Dauletov, G.N.Kashin, R.V.Konakova, V.G.Lyapin, V.V.Milenin, V.F.Mitin, Some features of interaction between phases in Ge/GaAs heterostructure, Proc. Semiconductor Conference, CAS’98, Sinaia, Romania, 6-10 October, 1998, Vol.1, pp.229-231.


1997

V.F.Mitin, Yu.A.Tkhorik and E.F.Venger. All-purpose technology of physical sensors on the base of Ge/GaAs heterostructures. Microelectronics Journal, Vol.28, pp.617-625 (1997).

Mitin V.F., Venger E.F., Boltovets N.S., Oszwaldowski M., and Berus T., Germanium film resistance thermometers at low temperatures and in high magnetic fieldsProc. of 11th European Conference on Solid-State Tranducers “Eurosensors XI”, Warsaw, Poland, 21-24 September, 1997, pp.1077-1080. 

V.F.Mitin, Ge films on GaAs: preparetion, properties and application to temperature sensorsProc. of 21th International Conference on Microelectronics (MIEL’97), Vol.2, Nis, Yugoslavia, 14-17 September, 1997, pp.551-554. 

N.S.Boltovets, K.A.Dauletov, V.V.Gavrilenko, V.V.Kholevchuk, R.V. Konakova, V.G.Lyapin, V.V.Milenin, V.F.Mitin and E.F.Venger. Physical sensors based on Ge-GaAs heterostructure.Proc. of ICECS’97, Cairo, Egypt, December 15-18, 1997, pp.349-352.


1996

V.F.Mitin, Yu.A.Tkhorik and E.F.Venger. Ge films on GaAs: low-temperature electrical properties and application to cryogenic resistance temperature sensors. Czechoslovak Journal of Physics, Vol.46, pp.2855-2856 (1996).

А.В.Бобыль, К.А.Исмайлов, Р.В.Конакова, Л.Н.Кравченко, В.В.Миленин, В.Ф.Митин, И.В.Прокопенко. Влияние гадиации на явления переноса в НЕМТ-структурах AlGaAs/GaAs. Петербургский журнал электроники, No. 4, с. 26-29 (1996).

V.F.Mitin, Yu.A.Tkhorik and E.F.Venger, New type of thin-film germanium resistance thermometer for use in a wide temperature range, Proc. of 16th International Cryogenic Engineering Conference / International Cryogenic Materials Conference (ICEC16/ICMC), Kitakyushu, Japan, May 20-24, 1996, pp.653-656. 


1995 

V.F.Mitin and Yu.A.Tkhorik, Production of sensors for different physical parameters on the base of all-purpose and unified technology, Proc. of 20th International Conference on Microelectronics (MIEL’95),Vol. 2, Nis, Serbia, 12-14 September, 1995, pp.553-557.


1994

V.Mitin. Microsensors of temperature, magnetic field, and strain. Cryogenics, Vol. 34, (ICEC Supplement) pp. 437-440 (1994).

V.F.Mitin and Yu.A.Tkhorik, Sensors on the base of Ge-GaAs heterostructure, Proc. of 17th Annual Semiconductor Conference, Sinaia, Romania, 11-16 October, 1994, Vol.2, pp.533-536. 

S.A.Vasilkovskii, V.F.Mitin, Yu.A.Tkhorik and V.V.Khalevchuk, Heavily doped and strongly compensated heteroepitaxial germanium films on GaAs, Proc. of 17th Annual Semiconductor Conference, Sinaia, Romania, 11-16 October, 1994, Vol. 1, pp.243-246.


1993

В.Ф.Митин, Ю.А.Тхорик. Микросенсоры физических величин на основе пленок германия на арсениде галлияПетербургский журнал электроники, No. 3, с. 48-51 (1993).

V.F.Mitin, Yu.A.Tkhorik, Temperature, strain, pressure, magnetic field microsensors and photodetectors on base Ge-GaAs heterostructure, Proc. of International Conferense on Sensor Systems and Components (Sensor Techno) , St.Petersburg, Russia, June 22-23, 1993, pp.41-43. 


1991 

V.F.Mitin, E.V.Mozdor, and Yu.A.Tkhorik. Two-dimensional percolation in the heteroepitaxial films of germanium. Физика низких температур (Fiz. Nizk. Temp. 17, pp.1124-1126 (1991)) [Sov. J. Low Temp. Phys. 17(9), pp.588-590 (September 1991)]. 


1989 

В.Ф.Митин, С.В.Корытцев, Ю.М.Шварц, Ю.А.Тхорик. Измерительные датчики на основе гетероэпитаксиальных пленок германия на арсениде галлияПриборы и системы управления, No. 7, с. 29-30 (1989) 


1987 

N.P.Garbar, L.A.Matveeva, V.F.Mitin, Yu.A.Tkhorik, R.Harman, Yu.M.Shvarts, and Z.Stroubek. Heavily doped and strongly compensated heteroepitaxial germanium films. Fiz. Tekh. Poluprovodn., vol. 21, no. 3, pp. 393-399, March 1987 [Sov. Phys. Semicond. Vol. 21, no. 3, pp.245-249, March 1987]. 


1986 

V.F.Mitin, Yu.A.Tkhorik, Yu.M.Shvarts. Thermometrical characteristics of films of heavily doped and higly compensated germanium. Ukrainian Journal of Physics, Vol. 31, No. 1, pp. 105-107 (1986).

 

Selected abstracts of international conferences:


2003 

V.F.Mitin, V.K.Dugaev, G.G.Ihas, and C.McKenney, Giant Magnetic Field Effect on Germanium Film Electrical Conductance and its use for Low Magnetic Field Detection at Ultra-Low TemperaturesEuropean MRS-2003 (2003). 

G.G.Ihas, V.F.Mitin, and N.S.Sullivan, Cryogenic Mass Gauging in a Free-falling Storage TankQFS-2003, Albuqueque, June 2003. 


2002 

G.G.Ihas, C.M.McKenney, V.F.Mitin, V.K.Dugaev, M.Vieira. Characterization of Ge Thin Film Thermometers. American Physical Society. The 69th Annual Meeting of the Southeastern, abstract #HB.002


Certificates on inventions:

V.F.Mitin et al, Sensor for measurement of temperature, strain and magnetic field induction, USSR certificate on Invention No.1602156 (1990). 

V.F.Mitin et al, A method for measurement of strain in magnetic field, USSR certificate on Invention No.1511590 (1989). 

V.F.Mitin et al, Semiconductor strain sensor, USSR certificate on Invention No.1457543 (1988). 

V.F.Mitin et al, Semiconductor strain sensor, USSR certificate on Invention No.1393021 (1988). 

V.F.Mitin et al, Photodetector, USSR certificate on Invention No.1380555 (1987) 

V.F.Mitin et al, Semiconductor sensor of temperature and magnetic field induction, and a method for its calibration, USSR certificate on Invention No.1204040 (1985). 

V.F.Mitin et al, A method for measurement of magnetic field induction, USSR certificate on Invention No.1106259 (1984). 

V.F.Mitin et al, Thermoreistor, USSR certificate on Invention No.1085450 (1983). 

V.F.Mitin et al, A method for measurement of temperature in magnetic field, USSR certificate on Invention No.1067912 (1983).